inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc silicon npn power transistor 2N3053 description maximun soa curve high gain-bandwidth product : f t = 100mhz low leakage current applications designed for audio amplifiers ,cont rolled amplifiers ,ower supplie s, power oscillators and general purpose applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-a thermal resistance,junction to ambient 175 /w r th j-c thermal resistance,junction to case 35 /w symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v cer collector ? emitter sustaining voltage 50 v v cex collector - emiiter voltage 60 v v ebo emitter-base voltage 5 v i c collector current-continuous 0.7 a p c collector power dissipation@t a =25 1 w collector power dissipation@t c =25 5 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc silicon npn power transistors 2N3053 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)cbo collector-base breakdown voltage i c =0.1ma ; i e =0 60 v v (br)ebo emitter-base breakdown voltage i c =0.1ma ; i e =0 5 v v ceo(sus) collector ? emitter voltage i b = 100ma ;i b = 0 40 v v cer(sus) collector ? emitter voltage r be = 10w i c = 100ma 50 v v ce (sat) collector-emitter satu ration voltage i c =150ma; i b = 15ma 1.4 v v be(sat ) base-emitter satura tion voltage i c = 150ma ; i b =15ma 1.7 v i cbo collector cutoff current v ce =30v; i b =0 0.25 ua i ebo emitter cutoff current v eb = 4v; i c =0 0.25 ua h 21e static forward current transfer ratio i c = 0.15a ; v ce = 10v 50 250 f t current gain-bandwidth product i c = 50ma ; v ce = 10v;f=20mhz 100 mhz c 22b output capacitance v cb = 10v f =1mhz 15 pf c 11b input capacitance v cb = 10v f =1mhz 80 pf
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